Silicon on insulating substrate

Details Silicon on insulating substrate Silicon on insulating substrate

1995-06-14

1999-12-21

Fourson, George R.

Metal treatment

Barrier layer stock material, p-n type

With non-semiconductive coating thereon

257505, 257524, H01L 4902, H01L 2906

Patent

active

060044063

ABSTRACT:
A first silicon single crystal substrate and a second silicon single crystal substrate are bonded together and the first silicon single crystal substrate is formed thin as an SOI layer. An insulation film is buried in portions of the bonding surface of one of the two silicon single crystal substrates, and in addition, a polycrystal silicon layer is formed on the bonding surface of the silicon single crystal substrate on the side into which the insulation film is buried.

REFERENCES:
patent: 4837186 (1989-06-01), Ohata et al.
patent: 4963505 (1990-10-01), Fujii et al.
patent: 5138421 (1992-08-01), Saito
patent: 5356827 (1994-10-01), Ohoka
patent: 5374582 (1994-12-01), Okonogi et al.

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