Silicon on diamond-like carbon devices

Details Silicon on diamond-like carbon devices Silicon on diamond-like carbon devices

2008-04-08

2008-04-08

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S348000, C257S349000, C257S350000, C257S351000, C257S352000, C257S353000, C257S354000

Reexamination Certificate

active

07355247

ABSTRACT:
Embodiments of the invention provide substrate with an insulator layer on the substrate. The insulator layer may include diamond-like carbon. A device, such a tri-gate transistor may be formed on the diamond-like carbon layer.

REFERENCES:
patent: 5728624 (1998-03-01), Linn et al.
patent: 6271594 (2001-08-01), Matsubara
patent: 6316329 (2001-11-01), Hirota et al.
patent: 6337518 (2002-01-01), Grill et al.
patent: 6346747 (2002-02-01), Grill et al.
patent: 6570223 (2003-05-01), Machida et al.
patent: 6620698 (2003-09-01), Chen et al.
patent: 6627531 (2003-09-01), Enquist
patent: 6770955 (2004-08-01), Chrysler et al.
patent: 6890810 (2005-05-01), Amadon et al.
patent: 2003/0201492 (2003-10-01), Ravi
patent: 2004/0256624 (2004-12-01), Sung
Patent Application 042390.P12086, U.S. Appl. No. 10/208,890.
Patent Application 042390.14435, U.S. Appl. No. 10/227,068.
Patent Application 042390.16009, U.S. Appl. No. 10/608,406.
Patent Application 042390.16684, U.S. Appl. No. 10/672,968.
Patent Application 042390.P20396, U.S. Appl. No. 10/987,775.
Patent Application 042390.P15039, U.S. Appl. No. 10/314,015.
Patent Application 042390.P15039D, U.S. Appl. No. 10/824,458.
Patent Application 042390.P15482, U.S. Appl. No. 10/313,686.
Patent Application 042390.P15482D, U.S. Appl. No. 10/973,161.
Patent Application 042390.P16932, U.S. Appl. No. 10/610,356.
Patent Application 042390.P17616, U.S. Appl. No. 10/835,479.
Patent Application 042390.P19032, U.S. Appl. No. 10/809,243.
“Replacing the BOX with buried alumina: Improved thermal dissipation in SOIMOSFET's” K. Oshima, et al. Proceedings of the International Symposium on Silicon on Insulator Technology and Devices XI, The Electrochemical Society, p. 45(2003).
“Studies on novel SOI structures with AIN film as buried insulator” C. Lin et al. Proceedings of the International Symposium on Silicon on Insulator Technology and Devices XI, The Electrochemical Society, p. 51 (2003).

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