Silicon on diamond circuit structure

Details Silicon on diamond circuit structure Silicon on diamond circuit structure

1994-05-25

1996-10-01

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257 49, 257 51, 257524, H01L 310312, H01L 2904, H01L 31036

Patent

active

055613039

ABSTRACT:
An integrated circuit structure containing dielectrically isolated islands having heat dissipation paths of enhanced thermal conductivity. A semiconductor structure comprises a first layer of crystalline material with a layer comprising polycrystalline diamond formed over the first layer. A layer of polycrystalline silicon is formed over the diamond containing layer and a layer of monocrystalline material is formed over the polycrystalline silicon.

REFERENCES:
patent: 3689357 (1972-09-01), Jordan
patent: 4554059 (1985-11-01), Short et al.
patent: 4903089 (1990-02-01), Hollis et al.
patent: 4962062 (1990-10-01), Uchiyama et al.
patent: 5107315 (1992-04-01), Kumagai et al.
Appl. Phys. Lett, vol. 56, No. 23, Jun. 1990, M. I. Landstrass, et al. "Total Dose Radiation Hardness of Diamond-based Silicon-on-insulator Structures ".
Proceedings of the IEEE, vol. 79, No. 5, May 1991, W. Zhu, et al., "Growth and Characterization of Diamond Films on Nondiamond Substrates for Electronic Applications ".

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