Silicon nitride thin films with improved properties

Details Silicon nitride thin films with improved properties Silicon nitride thin films with improved properties

1991-11-21

1994-02-22

Padgett, Marianne

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427573, 427574, 437195, 437190, 437241, B05D 306, B05D 512

Patent

active

052885275

ABSTRACT:
A method for preparing silicon nitride films with improved properties and characterized by a limited concentration of hydrogen atoms, a high index of refraction, resistance to attack by a hydrofluoric solution, prevention of diffusion of alkalines and oxygen, and good dielectric properties such as optical gap. The process of preparation uses plasma CVD with ammonia. The invention can be applicable to flat screens, TFT transistors and functional glazings.

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patent: 4908333 (1990-03-01), Shimokawa et al.
patent: 5041303 (1991-08-01), Wertheimer et al.

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