Silicon nitride read-only-memory

Details Silicon nitride read-only-memory Silicon nitride read-only-memory

2005-03-15

2005-03-15

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S390000, C438S257000

Reexamination Certificate

active

06867463

ABSTRACT:
A silicon nitride read-only-memory structure is provided. The silicon nitride read-only-memory includes a control gate over a substrate, a source region and a drain region in the substrate on each side of the control gate, a charge-trapping layer between the control gate and the substrate and a channel layer in the substrate underneath the charge-trapping layer and between the source region and the drain region. The charge-trapping layer further includes an isolation region. The isolation region partitions the charge-trapping layer into a source side charge-trapping block and a drain side charge-trapping block so that a two-bit structure is formed.

REFERENCES:
patent: 6538292 (2003-03-01), Chang et al.
patent: 6674133 (2004-01-01), Chang

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