Silicon nitride passivation for a solar cell

Details Silicon nitride passivation for a solar cell Silicon nitride passivation for a solar cell

2011-08-09

2011-08-09

Ahmed, Shamim (Department: 1713)

Coating processes

Electrical product produced

Photoelectric

C427S058000, C427S248100, C427S569000, C118S715000

Reexamination Certificate

active

07993700

ABSTRACT:
A silicon nitride layer may be formed with a suitable refractive index, mass density, and hydrogen concentration so that the layer may serve as an ARC/passivation layer on a solar cell substrate. The silicon nitride layer may be formed on a solar cell substrate by adding a hydrogen gas diluent to a conventional precursor gas mixture during the deposition process. Alternatively, the silicon nitride layer may be formed on a solar cell substrate by using a precursor gas mixture consisting essentially of silane and nitrogen. To improve deposition chamber throughput, the silicon nitride layer may be a dual stack film that includes a low-hydrogen interface layer and a thicker bulk silicon nitride layer. Placing a plurality of solar cell substrates on a substrate carrier and transferring the substrate carrier into the deposition chamber may further enhance deposition chamber throughput.

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PCT International Search Report and Written Opinion dtd Jul. 30, 2010 for International Application No. PCT/US2008/059674.

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