Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Patent
1997-10-02
1999-02-23
Bowers, Charles
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
427 99, 4272552, H01L 21318
Patent
active
058743685
ABSTRACT:
A process for the low pressure chemical vapor deposition of silicon nitride from ammonia and a silane of the formula: (t-C.sub.4 H.sub.9 NH).sub.2 SiH.sub.2 provides improved properties of the resulting film for use in the semiconductor industry.
REFERENCES:
patent: 3574677 (1971-04-01), Pammer et al.
patent: 4777205 (1988-10-01), La Scola et al.
patent: 4992299 (1991-02-01), Hochberg et al.
patent: 5234869 (1993-08-01), Mikata et al.
patent: 5486589 (1996-01-01), Inoue
Semiconductor and Process technology handbook, edited by Gary E. McGuire, Noyes Publication, New Jersey, (1988), pp. 289-301.
Silicon Processing for the VLSI Era, Wolf, Stanley, and Talbert, Richard N., Lattice Press, Sunset Beach, California (1990), pp. 20-22, 327-330.
Sorita et al., J. Electro. Chem. Soc., vol. 141, No. 12, (1994), pp. 3505-3511.
B. A. Scott, J. M. Martinez-Duart, D. B. Beach, T. N. Nguyen, R. D. Estes and R. G. Schad., Chemtronics, 1989, vol. 4, pp. 230-234.
J. M. Grow, R. A. Levy, X. Fan and M. Bhaskaran, Materials Letters, 23, (1995), pp. 187-193.
A. K. Hochberg and D. L. O'Meara, Mat. Res. Soc. Symp. Proc., vol. 204, (1991), pp. 509-514.
R. G. Gordon and D. M. Hoffman, Chem. Mater., vol. 2, (1990), pp. 482-484.
Hochberg Arthur Kenneth
Hockenhull Herman Gene
Kaminsky Felicia Diane
Laxman Ravi Kumar
Roberts David Allen
Air Products and Chemicals Inc.
Bowers Charles
Chase Geoffrey L.
Whipple Matthew
LandOfFree
Silicon nitride from bis(tertiarybutylamino)silane does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Silicon nitride from bis(tertiarybutylamino)silane, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon nitride from bis(tertiarybutylamino)silane will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-306646