Silicon nitride-free isolation methods for integrated circuits

Details Silicon nitride-free isolation methods for integrated circuits Silicon nitride-free isolation methods for integrated circuits

1997-09-19

1999-10-12

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

438692, 438959, 438424, H01L 21762

Patent

active

059666145

ABSTRACT:
Trench isolation methods for integrated circuit substrates may be simplified by eliminating the steps of forming a silicon nitride layer, etching the silicon nitride layer and removing the silicon nitride layer. In particular, a silicon nitride-free mask pattern, such as a photoresist mask pattern, may be formed on a silicon nitride-free integrated circuit substrate. The silicon nitride-free integrated circuit substrate is etched through the silicon nitride-free mask pattern to form a trench in the substrate. An insulating layer is formed in the trench and is chemical-mechanical polished to form a trench isolating layer. By eliminating the silicon nitride layer, simplified processing and improved performance may be obtained.

REFERENCES:
patent: 4741799 (1988-05-01), Chen et al.
patent: 5275965 (1994-01-01), Manning
patent: 5312770 (1994-05-01), Pasch
patent: 5441094 (1995-08-01), Pasch
patent: 5453639 (1995-09-01), Cronin et al.
Fazan et al., "A Highly Manufacturable Trench Isolation Process for Deep Submicron DRAMs", IEDM 93, pp. 57-60.
Park et al., "A Very Simple Trench Isolation (VSTI) Technology With Chemo-Mechanically Polished (CMP) Substrate Si", 1997 Symposium on VLSI Technology, Jun. 10, 1997.

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