Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1990-05-29
1993-11-23
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257410, 257314, 257649, 437184, 437173, 437225, 437235, 427164, 427574, 427579, H01L 2358, H01L 2701, H01L 2976, H01L 2994
Patent
active
052647242
ABSTRACT:
A thin film layer of silicon nitride is deposited on silicon substrate by plasma enhanced chemical vapor deposition techniques is stabilized by post-deposition rapid thermal annealing at temperatures ranging from about 600.degree. C. to about 700.degree. C. and at times ranging from about 3 seconds to about 30 seconds.
REFERENCES:
patent: 3652324 (1972-03-01), Chu et al.
patent: 3805130 (1974-04-01), Yamazaki
patent: 3856587 (1974-12-01), Yamazaki et al.
patent: 4229232 (1980-10-01), Kirkpatrick
patent: 4277320 (1981-07-01), Beguwala et al.
patent: 4331709 (1982-05-01), Risch et al.
patent: 4406053 (1983-09-01), Takasaki et al.
patent: 4566913 (1986-01-01), Brodsky et al.
patent: 4585492 (1986-04-01), Weinberg et al.
patent: 4611308 (1986-09-01), Lonky
patent: 4636400 (1987-01-01), Nishioka et al.
patent: 4692344 (1987-09-01), Kaganowicz et al.
patent: 4776925 (1988-10-01), Fossum et al.
patent: 4784964 (1988-11-01), Hulseweh et al.
patent: 4784975 (1988-11-01), Hofmann et al.
patent: 4863755 (1989-09-01), Hess et al.
patent: 4898839 (1990-02-01), Fujinuma et al.
patent: 4962065 (1990-10-01), Brown et al.
"Direct measurement of evaporation during rapid thermal processing of capped GaAs", T. E. Haynes and W. K. Chu, and S. T. Picraux, Appl. Phys. Lett., vol. 50, No. 16, Apr. 20, 1987.
"Comparison of the Interfacial Stress Resistance in Rapid Thermally Processed Thin Dielectrics", R. B. Calligaro et al. Elsevier Science Publishers B.V. (North-Holland), 1988, pp. 221-224.
"Excellent Charge-Trapping Properties of Ultrathin Reoxidized Nitrided Oxides Prepared by Rapid Thermal Processing", Takashi Hori and Hiroshi Iwasaki, IEEE Electron Device Letters, vol. 8, No. 4, Apr. 1988.
"Rapid Thermal Annealing of Si Implanted GaAs", W. M. Paulson, R. N. Legge, and C. E. Weitzel, Journal of Electronic Materials, vol. 16, No. 3, 1987, pp. 187-193.
"Rapid Thermal Annealing of Implanted Layers in Silicon Nitride Encapsulated Gallium Arsenide", M. R. Wilson et al., J. Electrochem. Soc.: Solid-State Science and Technology, vol. 134, No. 10, Oct. 1987, pp. 2560-2565.
"Room Temperature Deposition of Silicon Nitride Films Using Very Low Frequency (50 Hz) Plasma CVD", M. Shimozuma et al., Journal of Electronic Materials, vol. 14, No. 4, 1985, pp. 573-586.
"Plasma Deposited Silicon Nitride for Indium Phosphide Encapsulation", G. J. Valco et al., Electrochem. Soc., vol. 136, No. 1, Jan. 1989, pp. 175-182.
"Materials Issues In Silicon Integrated Circuit Processing", Mat. Res. Soc. Symp. Proc., vol. 71, 1986, Materials Research Society, Marc Wittmer, James Stimmel, Michael Strathman, editors, pp. 441-447 and 449-454.
"Rapid thermal annealing of indium phosphide compound semiconductors", M. D. Beidenbender et al., J. Vac. Sci. Technol. A, vol. 5, No. 4, Jul./Aug. 1987, pp. 1437-1441.
"Insulating Films on Semiconductors", Insulating Films on Semiconductors, J. F. Verwei; & D. R. Wolters (Editors), Elsevier Science Publishers B.V. (North-Holland), 1983, pp. 116-121 and 224-229.
Brown William D.
Khaliq Muhammad A.
Ivester Ivester
Loke Steven
Mintel William
The University of Arkansas
LandOfFree
Silicon nitride for application as the gate dielectric in MOS de does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Silicon nitride for application as the gate dielectric in MOS de, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon nitride for application as the gate dielectric in MOS de will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1851622