Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2004-07-06
2009-02-10
Luu, Chuong A. (Department: 2892)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S257000, C438S710000, C438S514000
Reexamination Certificate
active
07488690
ABSTRACT:
An assembly comprises a multilayer nitride stack having nitride etch stop layers formed on top of one another, each of the nitride etch stop layers is formed using a film forming process. A method of making the multilayer nitride stack includes placing a substrate in a single wafer deposition chamber and thermally shocking the substrate momentarily prior to deposition. A first nitride etch stop layer is deposited over the substrate. A second nitride etch stop layer is deposited over the first nitride etch stop layer.
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Iyer R. Suryanarayanan
Lam Andrew M.
Maeda Yuji
Mele Thomas
Seutter Sean M.
Applied Materials Inc.
Blakely & Sokoloff, Taylor & Zafman
Luu Chuong A.
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