Coating apparatus – Gas or vapor deposition
Reexamination Certificate
2007-01-02
2007-01-02
Lund, Jeffrie R. (Department: 1763)
Coating apparatus
Gas or vapor deposition
C438S791000, C438S778000, C438S905000, C427S255390, C427S255393, C134S001000, C134S001300
Reexamination Certificate
active
10986282
ABSTRACT:
A thermal processing system (1) includes a reaction vessel (2) capable of forming a silicon nitride film on semiconductor wafers (10) through interaction between hexachlorodisilane and ammonia, and an exhaust pipe (16) connected to the reaction vessel (2). The reaction vessel2is heated at a temperature in the range of 500 to 900° C. and the exhaust pipe (16) is heated at 100° C. before disassembling and cleaning the exhaust pipe16. Ammonia is supplied through a process gas supply pipe (13) into the reaction vessel (2), and the ammonia is discharged from the reaction vessel (2) into the exhaust pipe (16).
REFERENCES:
patent: 5482739 (1996-01-01), Hey et al.
patent: 5484484 (1996-01-01), Yamaga et al.
patent: 6159298 (2000-12-01), Saito
patent: 6242347 (2001-06-01), Vasudev et al.
patent: 6268299 (2001-07-01), Jammy et al.
patent: 6284583 (2001-09-01), Saida et al.
patent: 6333547 (2001-12-01), Tanaka et al.
patent: 6354241 (2002-03-01), Tanaka et al.
patent: 6383300 (2002-05-01), Saito et al.
patent: 6486083 (2002-11-01), Mizuno et al.
patent: 6495476 (2002-12-01), Lee et al.
patent: 6807971 (2004-10-01), Saito et al.
patent: 6844273 (2005-01-01), Kato et al.
patent: 2002/0106909 (2002-08-01), Kato et al.
patent: 2005/0081789 (2005-04-01), Kato et al.
patent: 08-176829 (1996-07-01), None
patent: 10-125666 (1998-05-01), None
patent: 2000-138171 (2000-05-01), None
patent: 2000-174007 (2000-06-01), None
R.C. Taylor et al., “LPCVD of Silicon Nitride Films From Hexachlorodisilane and Ammonia”, 1988, Materials Research Society, vol. 105, pp. 319-324.
Tanaka et al., “Film Properties of Low-k Silicon Nitride Films Formed by Hexachlorodisilane and Ammonia”, 2000, Journal of the Electrochemical Society, pp. 2284-2289.
Endo Atsushi
Fukushima Kohei
Kato Hitoshi
Kumagai Takeshi
Nishita Tatsuo
Lund Jeffrie R.
Smith , Gambrell & Russell, LLP
Tokyo Electron Limited
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