Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-02-22
2011-02-22
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S630000, C257S760000, C257SE21625
Reexamination Certificate
active
07893439
ABSTRACT:
An object of the present invention is to apply an insulating film of cure and high quality that is suitably applicable as gate insulating film and protective film to a technique that the insulating film is formed on the glass substrate under a temperature of strain point or lower, and to a semiconductor device realizing high efficiency and high reliability by using it. In a semiconductor device of the present invention, a gate insulating film of a field effect type transistor with channel length of from 0.35 to 2.5 μm in which a silicon nitride film is formed over a crystalline semiconductor film through a silicon oxide film, wherein the silicon nitride film contains hydrogen with the concentration of 1×1021/cm3or less and has characteristic of an etching rate of 10 nm/min or less with respect to mixed solution containing an ammonium hydrogen fluoride (NH4HF2) of 7.13% and an ammonium fluoride (NH4F) of 15.4%.
REFERENCES:
patent: 3967981 (1976-07-01), Yamazaki
patent: 4951601 (1990-08-01), Maydan et al.
patent: 5043299 (1991-08-01), Chang et al.
patent: 5182619 (1993-01-01), Pfiester
patent: 5286296 (1994-02-01), Sato et al.
patent: 5306651 (1994-04-01), Masumo et al.
patent: 5310410 (1994-05-01), Begin et al.
patent: 5324360 (1994-06-01), Kozuka
patent: 5396084 (1995-03-01), Matsumoto
patent: 5587520 (1996-12-01), Rhodes
patent: 5614730 (1997-03-01), Nakazawa et al.
patent: 5665210 (1997-09-01), Yamazaki
patent: 5847410 (1998-12-01), Nakajima
patent: 5888858 (1999-03-01), Yamazaki et al.
patent: 5985740 (1999-11-01), Yamazaki et al.
patent: 6063654 (2000-05-01), Ohtani
patent: 6077731 (2000-06-01), Yamazaki et al.
patent: 6093934 (2000-07-01), Yamazaki et al.
patent: 6100562 (2000-08-01), Yamazaki et al.
patent: 6144057 (2000-11-01), Yamazaki
patent: 6177302 (2001-01-01), Yamazaki et al.
patent: 6180439 (2001-01-01), Yamazaki et al.
patent: 6225152 (2001-05-01), Yamazaki et al.
patent: 6259120 (2001-07-01), Zhang et al.
patent: 6261877 (2001-07-01), Yamazaki et al.
patent: 6316810 (2001-11-01), Yamazaki et al.
patent: 6323142 (2001-11-01), Yamazaki et al.
patent: 6323528 (2001-11-01), Yamazaki et al.
patent: 6329229 (2001-12-01), Yamazaki et al.
patent: 6362507 (2002-03-01), Ogawa et al.
patent: 6365510 (2002-04-01), Schmidbauer et al.
patent: 6465287 (2002-10-01), Yamazaki et al.
patent: 6478263 (2002-11-01), Yamazaki et al.
patent: 6492659 (2002-12-01), Yamazaki et al.
patent: 6492681 (2002-12-01), Koyama et al.
patent: 6498369 (2002-12-01), Yamazaki et al.
patent: 6504174 (2003-01-01), Yamazaki et al.
patent: 6528358 (2003-03-01), Yamazaki et al.
patent: 6528820 (2003-03-01), Yamazaki et al.
patent: 6541315 (2003-04-01), Yamazaki et al.
patent: 6555843 (2003-04-01), Yamazaki et al.
patent: 6599818 (2003-07-01), Dairiki
patent: 6614076 (2003-09-01), Kawasaki et al.
patent: 6620658 (2003-09-01), Isobe et al.
patent: 6627554 (2003-09-01), Komada
patent: 6639265 (2003-10-01), Arao et al.
patent: 6653657 (2003-11-01), Kawasaki et al.
patent: 6674136 (2004-01-01), Ohtani
patent: 6744069 (2004-06-01), Yamazaki et al.
patent: 6794229 (2004-09-01), Asami et al.
patent: 6822261 (2004-11-01), Yamazaki et al.
patent: 6838397 (2005-01-01), Takayama et al.
patent: 6853004 (2005-02-01), Ohtani
patent: 6872658 (2005-03-01), Arakawa et al.
patent: 6893887 (2005-05-01), Yamagata et al.
patent: 7037811 (2006-05-01), Yamazaki et al.
patent: 7042427 (2006-05-01), Inukai
patent: 7056381 (2006-06-01), Yamazaki et al.
patent: 7078727 (2006-07-01), Yamazaki et al.
patent: 7098087 (2006-08-01), Akimoto et al.
patent: 7105392 (2006-09-01), Isobe et al.
patent: 7135741 (2006-11-01), Yamazaki et al.
patent: 7141491 (2006-11-01), Yamazaki et al.
patent: 7148092 (2006-12-01), Isobe et al.
patent: 7173282 (2007-02-01), Yamazaki et al.
patent: 7220613 (2007-05-01), Asami et al.
patent: 7264979 (2007-09-01), Yamagata et al.
patent: 7335570 (2008-02-01), Yamazaki
patent: 7422630 (2008-09-01), Yamazaki et al.
patent: 7427780 (2008-09-01), Yamazaki et al.
patent: 7456056 (2008-11-01), Yamazaki et al.
patent: 2001/0002703 (2001-06-01), Koyama
patent: 2002/0001909 (2002-01-01), Hasegawa
patent: 2002/0043660 (2002-04-01), Yamazaki et al.
patent: 2002/0043662 (2002-04-01), Yamazaki et al.
patent: 2002/0075423 (2002-06-01), Fujino
patent: 2002/0121860 (2002-09-01), Seo et al.
patent: 2003/0001158 (2003-01-01), Yamazaki et al.
patent: 2003/0013280 (2003-01-01), Yamanaka
patent: 2003/0098458 (2003-05-01), Yamazaki et al.
patent: 2003/0209710 (2003-11-01), Yamazaki et al.
patent: 2003/0218171 (2003-11-01), Isobe et al.
patent: 2004/0077134 (2004-04-01), Takayama et al.
patent: 2005/0164434 (2005-07-01), Arakawa et al.
patent: 2006/0249730 (2006-11-01), Yamazaki et al.
patent: 2006/0261341 (2006-11-01), Akimoto et al.
patent: 2007/0254416 (2007-11-01), Asami et al.
patent: 0 468 758 (1992-01-01), None
patent: 1 033 755 (2000-09-01), None
patent: 03-016129 (1991-01-01), None
patent: 04-080928 (1992-03-01), None
patent: 04-130631 (1992-05-01), None
patent: 05-044017 (1993-02-01), None
patent: 07-056190 (1995-03-01), None
patent: 08-195494 (1996-07-01), None
patent: 08-242004 (1996-09-01), None
patent: 09-232250 (1997-09-01), None
patent: 09-312406 (1997-12-01), None
patent: 10-084085 (1998-03-01), None
patent: 11-251599 (1999-09-01), None
patent: 2000-315798 (2000-11-01), None
patent: 2001-203363 (2001-07-01), None
patent: 2001-261499 (2001-09-01), None
patent: 2002-050634 (2002-02-01), None
patent: 2002-057342 (2002-02-01), None
Akimoto Kengo
Takayama Toru
Yamazaki Shunpei
Hu Shouxiang
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Silicon nitride film and semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Silicon nitride film and semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon nitride film and semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2636358