Silicon nitride and silicon oxide etchant

Details Silicon nitride and silicon oxide etchant Silicon nitride and silicon oxide etchant

1979-05-09

1981-05-26

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566591, 252 793, 252 794, H01L 21312, B44C 122, C03C 1500, C03C 2506

Patent

active

042696542

ABSTRACT:
An etching solution for etching composite structures of silicon nitride on silicon oxide on silicon substrates which etches the silicon nitride at a rate equal to or faster than the silicon oxide which comprises concentrated aqueous hydrogen fluoride in a high boiling, organic solvent.

REFERENCES:
patent: 3518135 (1970-06-01), Cerniglia et al.
patent: 3607480 (1971-09-01), Harrap
patent: 3642549 (1972-02-01), Couture et al.
patent: 3709749 (1973-01-01), Junzi sato et al.
patent: 3811974 (1974-05-01), Squillace et al.
patent: 3979241 (1976-09-01), Maeda et al.
Abstract No. 112, The Electrochemical Society Meeting, Spring 1977, pp. 300-302, Etching of CVD Si.sub.3 N.sub.4 Films in Acidic Fluoride Media by Cheryl A. Deckert.
Semiconductor Silicon, The Electrochemical Society, Princeton, New Jersey, 1973, pp. 354-362, Equal Etch Rates of Si.sub.3 N.sub.4 and SiO.sub.2 Utilizing HF Dilution and Temperature Dependence by Victor Harrap.
Abstract No. 124, The Electrochemical Society Meeting of 1973 pp. 313-315, Equal Etch Rates of Si.sub.3 N.sub.4 and SiO.sub.2 Utilizing HF Dilution and Temperature Dependence by Victor Harrap, Spring Meeting.

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