Silicon metallographic etch

Details Silicon metallographic etch Silicon metallographic etch

1973-07-02

1978-01-31

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

252 793, H01L 21306

Patent

active

040713970

ABSTRACT:
A metallographic etch is disclosed which removes silicon at a very low rate. The removal of the silicon at a low rate means that the etch is highly controlled. Additional characteristics of the metallographic etch are that it is non-selective and it removes the silicon uniformly. Its special uses are related to an etch which is specially adapted for minimizing the Q.sub.ss charge on a silicon surface, as well as for removing work damage on wafers in which very shallow junction devices are to be formed.

REFERENCES:
patent: 3231422 (1966-01-01), Emeis
patent: 3514407 (1970-05-01), Missel
patent: 3775200 (1973-11-01), DE Noble et al.
patent: 3813311 (1974-05-01), Beck et al.
patent: 4029542 (1977-06-01), Swartz

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