Silicon implanted and bombarded with phosphorus ions

Details Silicon implanted and bombarded with phosphorus ions Silicon implanted and bombarded with phosphorus ions

1976-12-30

1978-05-30

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148 15, 156643, 156657, 252 623E, 252 795, 427 85, 428195, H01L 21306

Patent

active

040922090

ABSTRACT:
A composition of matter produced by a process wherein silicon is bombarded by phosphorus ions and phosphorus ions are implanted therein. A method for rendering silicon substantially unetchable in a potassium hydroxide etchant by implanting phosphorus in the silicon by brombardment with phosphorus ions.

REFERENCES:
patent: 3738880 (1973-06-01), Laker
patent: 3745070 (1973-07-01), Yada et al.
patent: 3929528 (1975-12-01), Davidson et al.

Affiliated with

Also associated with

Rating

Silicon implanted and bombarded with phosphorus ions does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon implanted and bombarded with phosphorus ions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon implanted and bombarded with phosphorus ions will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-467949