Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Reexamination Certificate
2007-04-10
2007-04-10
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
C438S316000, C257S197000, C257SE29188
Reexamination Certificate
active
11121454
ABSTRACT:
A silicon germanium heterojunction bipolar transistor device and method comprises a semiconductor region, and a diffusion region in the semiconductor region, wherein the diffusion region is boron-doped, wherein the semiconductor region comprises a carbon dopant therein to minimize boron diffusion, and wherein a combination of an amount of the dopant, an amount of the boron, and a size of the semiconductor region are such that the diffusion region has a sheet resistance of less than approximately 4 Kohms/cm2. Also, the diffusion region is boron-doped at a concentration of 1×1020/cm3to 1×1021/cm3. Additionally, the semiconductor region comprises 5–25% germanium and 0–3% carbon. By adding carbon to the semiconductor region, the device achieves an electrostatic discharge robustness, which further causes a tighter distribution of a power-to-failure of the device, and increases a critical thickness and reduces the thermal strain of the semiconductor region.
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Lanzerotti Louis D.
Ronan Brian P.
Voldman Steven H.
Canale Anthony
Fourson George
Gibb I.P. Law Firm LLC
Parker John M.
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