Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2011-03-01
2011-03-01
Do, Thuan (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000, C716S030000, C716S030000
Reexamination Certificate
active
07900167
ABSTRACT:
Disclosed is a design structure for an improved semiconductor structure (e.g., a silicon germanium (SiGe) hetero-junction bipolar transistor) having a narrow essentially interstitial-free SIC pedestal with minimal overlap of the extrinsic base. Also, disclosed is a method of forming the transistor which uses laser annealing, as opposed to rapid thermal annealing, of the SIC pedestal to produce both a narrow SIC pedestal and an essentially interstitial-free collector. Thus, the resulting SiGe HBT transistor can be produced with narrower base and collector space-charge regions than can be achieved with conventional technology.
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Gluschenkov Oleg
Krishnasamy Rajendran
Schonenberg Kathryn T.
Canale Anthony J.
Do Thuan
Gibb I.P. Law Firm LLC
International Business Machines - Corporation
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