Silicon-germanium-carbon compositions in selective etch processe

Details Silicon-germanium-carbon compositions in selective etch processe Silicon-germanium-carbon compositions in selective etch processe

1995-12-06

1999-05-25

Fourson, George

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148DIG59, 148DIG150, 438 77, 438 82, 1566301, 1566531, 1566621, H01L 2184, C23F 124

Patent

active

059067080

ABSTRACT:
Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s) on a substrate, etchants especially suitable for Si--Ge--C etch-stops, and novel methods of use for Si--Ge--C compositions are provided. In particular, the invention relates to Si--Ge--C compositions, especially for use as etch-stops and related processes and etchants useful for microelectronic and nanotechnology fabrication.

REFERENCES:
patent: 4370510 (1983-01-01), Stirn
patent: 4681657 (1987-07-01), Hwang et al.
patent: 4885614 (1989-12-01), Furukawa et al.
patent: 5344524 (1994-09-01), Sharma et al.
patent: 5357899 (1994-10-01), Bassous et al.
patent: 5413679 (1995-05-01), Godbey
PCT Written Opinion dated Apr. 15, 1997.

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