Silicon-germanium-carbon compositions and processes thereof

Details Silicon-germanium-carbon compositions and processes thereof Silicon-germanium-carbon compositions and processes thereof

1998-01-15

2000-05-16

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

257 77, 257616, H01L 310312

Patent

active

060640812

ABSTRACT:
Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s) on a substrate, etchants especially suitable for Si--Ge--C etch-stops, and novel methods of use for Si--Ge--C compositions are provided. In particular, the invention relates to Si--Ge--C compositions, especially for use as etch-stops and related processes and etchants useful for microelectronic and nanotechnology fabrication.

REFERENCES:
patent: 4885614 (1989-12-01), Furukawa et al.
patent: 5461243 (1995-10-01), Ek
Im et al., "Optimization of Ge/C ratio for compensation of misfit strain in solid phase epitaxial growth of SiGe layers", App. Phys. Lett. 63 (19), pp. 2682-2684, Nov. 8, 1993.
Eberl et al., "Growth and strain compensation effects in ternary Si{1-x-y}Ge{x}C{y} alloy system", Appl. Phys. Lett. 60 (24), pp. 3033-3035, Jun. 15, 1992.
Regolini et al., "Growth and characterization of strain compensated Si{1-x-y}Ge{x}C{y} epitaxial layers", Matt. Lett. 18, pp. 57-60, Nov. 1, 1993.

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