Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-09-19
2006-09-19
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S719000, C438S728000, C438S729000
Reexamination Certificate
active
07109123
ABSTRACT:
A Si etching method etches a Si wafer held on a susceptor placed in a processing vessel by a plasma-assisted etching process. A mixed etching gas prepared by mixing fluorosulfur gas, such as SF6gas, or fluorocarbon gas, O2gas and fluorosilicon gas, such as SiF4gas is supplied into the processing vessel. RF power of 40 MHz or above is applied to the mixed etching gas to generate a plasma. The Si wafer is etched with radicals and ions contained in the plasma.
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Horiguchi Katsumi
Huang Yahui
Mimura Takanori
Nagaseki Kazuya
Yamamoto Kenji
Norton Nadine G.
Smith , Gambrell & Russell, LLP
Tokyo Electron Limited
Tran Binh X.
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