Silicon epitaxial wafer and the production method thereof

Details Silicon epitaxial wafer and the production method thereof Silicon epitaxial wafer and the production method thereof

2009-06-03

2010-10-19

Potter, Roy K (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

C257S616000, C257SE21090, C438S478000

Reexamination Certificate

active

07816765

ABSTRACT:
A silicon epitaxial wafer obtained by growing a silicon epitaxial layer on a surface of a silicon wafer having a diameter of at least 300 mm produced by slicing a silicon single crystal ingot doped with boron and germanium grown by the Czochralski method, wherein boron is doped to be at a concentration of 8.5×1018(atoms/cm3) or higher and germanium is doped to satisfy a relational expression (formula 1) below.3×(4.64×10-24·[Ge]-2.69×10-23·[B])5.43×r2×tepi(tsub)2≤26.[Forrmula⁢⁢1]

REFERENCES:
patent: 7250357 (2007-07-01), Senda et al.
patent: 2004/0235274 (2004-11-01), Kurita et al.
patent: 2006/0278157 (2006-12-01), Seuring et al.
patent: 6-112120 (1994-04-01), None

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