Silicon epitaxial reactor and control method

Details Silicon epitaxial reactor and control method Silicon epitaxial reactor and control method

1992-08-20

1994-02-22

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156613, 156614, 437234, 118715, 118728, C30B 2516

Patent

active

052883647

ABSTRACT:
An epitaxial reactor (10) includes a bell jar (11) wherein epitaxial depositions are performed. During an epitaxial deposition cycle, the temperature of the bell jar (11) is monitored by an infrared detector (22). After the temperature reaches a predetermined value, initiation of further epitaxial deposition cycles is inhibited. The control method extends the useful lifetime of heating lamps (12) and bell jar seals thereby reducing the cost of semiconductor wafers (16).

REFERENCES:
patent: 3567895 (1971-03-01), Paz
patent: 4806321 (1989-02-01), Nishizawa et al.
patent: 4823736 (1989-04-01), Post et al.
patent: 5108792 (1992-04-01), Anderson et al.
Sturm et al, "Temperature Control of Silicon-Germanium Alloy Epitaxial Growth on Silicon Substrates . . . ", Jour. Applied Physics vol. 69(1) Jan. 1, 1991 pp. 542-544.

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