Silicon direct bonding method

Details Silicon direct bonding method Silicon direct bonding method

2006-08-17

2008-10-28

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S406000, C257SE21122, C257SE21480

Reexamination Certificate

active

07442622

ABSTRACT:
A silicon direct bonding (SDB) method by which void formation caused by gases is suppressed. The SDB method includes: preparing two silicon substrates having corresponding bonding surfaces; forming trenches having a predetermined depth in at least one bonding surface of the two silicon substrates; forming gas discharge outlets connected to the trenches on at least one of the two silicon substrates to vertically penetrate the bonding surface; cleaning the two silicon substrates; closely contacting the two silicon substrates to each other; and thermally treating the two substrates to bond them to each other. The trenches are formed along at least a part of a plurality of dicing lines, and both ends of the trenches are clogged. Gases generated during a thermal treatment process can be smoothly and easily discharged through the trenches and the gas discharge outlet such that a void is prevented from being formed in the junctions of the two silicon substrates due to the gases.

REFERENCES:
patent: 4975390 (1990-12-01), Fujii et al.
patent: 6124145 (2000-09-01), Stemme et al.
patent: 6433367 (2002-08-01), Tohyama et al.

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