Silicon device production

Details Silicon device production Silicon device production

1993-07-06

1994-12-13

Bell, Janyce

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

4272481, 4273977, 427402, C23C 1600

Patent

active

053728602

ABSTRACT:
A method for producing a glass panel for silicon device fabrication, which method comprises forming a noncrystalline, or mixed-phase, silicon film on a glass substrate, the glass having a strain point greater than 560.degree. C., and subjecting the filmed glass to a heat treatment comprising heating at a temperature of at least 550.degree. C. for a period of time sufficient to convert the silicon film to polycrystalline silicon and to compact the glass.

REFERENCES:
patent: 4452828 (1984-06-01), Namba et al.
patent: 5213670 (1993-05-01), Bertagnolli et al.
patent: 5246744 (1993-09-01), Matsuda et al.

Affiliated with

Also associated with

Rating

Silicon device production does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon device production, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon device production will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1192158