Silicon deposition process

Details Silicon deposition process Silicon deposition process

1984-03-29

1986-05-20

Derrington, James

Plastic and nonmetallic article shaping or treating: processes

Gas or vapor deposition of article forming material onto...

118719, 427 93, B29C 1300

Patent

active

045900248

ABSTRACT:
An improved process is disclosed for the deposition in a reactor vessel of silicon on the interior walls of the reactor vessel and for the subsequent separation of the silicon from those walls. The reactor vessel has a generally rectangular cross section and is formed of a refractory material from which the deposited silicon separates by thermal expansion shear separation during cool down of the vessel and the deposited silicon. To improve the output of the deposition system, a plurality of partitions are provided in the reactor vessel and integral with the reactor walls. These partitions act as additional deposition surfaces, increasing the number of silicon sheets deposited as well as increasing the efficiency of the chemical reaction.

REFERENCES:
patent: 3950479 (1976-04-01), Reuschel et al.
patent: 4035460 (1977-07-01), Dietze et al.
patent: 4131659 (1978-12-01), Authier et al.
patent: 4292264 (1981-09-01), Cota et al.
patent: 4370288 (1983-01-01), Rice et al.

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