Silicon damage free process for double poly emitter and reverse

Details Silicon damage free process for double poly emitter and reverse Silicon damage free process for double poly emitter and reverse

1993-08-19

1995-11-14

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 41, 437 59, H01L 21265, H01L 2170

Patent

active

054666155

ABSTRACT:
A method of forming self-aligned transistors which may be either bipolar or field effect, and resultant structures, are described. Three insulator layers are formed over the surface of a monocrystalline semiconductor substrate and are patterned to form a protective block over the location of the first element of the transistor. A doped conductive layer is formed upon the substrate and upon the protective block. A fourth insulator layer is formed on the doped conductive layer. Those portions of the doped conductive layer and the fourth insulator layer that are above the horizontal plane of the top of the third insulator layer are removed. The third insulator layer is removed from the protective block. The structure is heated to form the second and third elements by outdiffusion. Oxide spacers are formed adjacent to the protective block. The protective block is removed. A gate oxide is formed for a field effect transistor. A second conductive layer is formed and patterned on and above the fifth insulator layer, and the elements of the transistors are completed with electrical contacts to the elements of the transistors.

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