Silicon crystal, and device and method for manufacturing same

Details Silicon crystal, and device and method for manufacturing same Silicon crystal, and device and method for manufacturing same

1998-06-05

2000-08-01

Utech, Benjamin L.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

117 78, 117 79, 117931, C30B 910, C30B 2906

Patent

active

060961287

ABSTRACT:
A germanium layer 19 is melted on top of a starting polycrystalline silicon ingot 18, at a temperature below the melting point of pure silicon. Silicon is dissolved at the interface and floats to the top of the germanium melt to form a silicon melt layer 11, from which a crystal 20 can be drawn. The process permits the production of large diameter crystal with low oxygen content and no more than one percent germanium.

REFERENCES:
patent: 4357201 (1982-11-01), Grabmaier et al.
patent: 4415545 (1983-11-01), Monkowski et al.

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