Silicon controlled rectifier structure with guard ring...

Details Silicon controlled rectifier structure with guard ring... Silicon controlled rectifier structure with guard ring...

2005-07-19

2005-07-19

Loke, Steven (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S355000

Reexamination Certificate

active

06919604

ABSTRACT:
The present invention provides a PMSCR (bridging modified lateral modified silicon controlled rectifier having first conductivity type) with a guard ring controlled circuit. The present invention utilizes controlled circuit such as switch to control functionally of guard ring of PMSCR. In normal operation, the switch is of low impedance such that the guard ring is short to anode and collects electrons to enhance the power-zapping immunity. Furthermore, during the ESD (electrostatic discharge) event, the switch is of high impedance such that the guard ring is non-functional. Thus, the PMSCR with guard ring control circuit can enhance both the ESD performance and the power-zapping immunity in the application of the HV (high voltage) pad.

REFERENCES:
patent: 6465848 (2002-10-01), Ker et al.

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