Silicon-controlled rectifier integral with output buffer

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257355, 257356, H01L 2362

Patent

active

059863072

ABSTRACT:
A silicon-rectifier integral with either an NMOS transistor or a PMOS transistor (together which constitute an output buffer) is disclosed. If integral with the NMOS transistor, the silicon-controlled rectifier is provided with the emitter and base of the NPN bipolar junction transistor acting as the source and bulk of the NMOS transistor. On the other hand, if integral with the PMOS transistor, the silicon-controlled rectifier is provided with the emitter and base of the PNP bipolar junction transistor acting as the source and bulk of the PMOS transistor.

REFERENCES:
patent: 5326994 (1994-07-01), Giebel et al.
patent: 5455436 (1995-10-01), Cheng
patent: 5576570 (1996-11-01), Ohsawa et al.
patent: 5682047 (1997-10-01), Consiglio et al.
patent: 5714796 (1998-02-01), Chishiki
patent: 5742085 (1998-04-01), Yu

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