Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-06-08
1999-11-16
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257355, 257356, H01L 2362
Patent
active
059863072
ABSTRACT:
A silicon-rectifier integral with either an NMOS transistor or a PMOS transistor (together which constitute an output buffer) is disclosed. If integral with the NMOS transistor, the silicon-controlled rectifier is provided with the emitter and base of the NPN bipolar junction transistor acting as the source and bulk of the NMOS transistor. On the other hand, if integral with the PMOS transistor, the silicon-controlled rectifier is provided with the emitter and base of the PNP bipolar junction transistor acting as the source and bulk of the PMOS transistor.
REFERENCES:
patent: 5326994 (1994-07-01), Giebel et al.
patent: 5455436 (1995-10-01), Cheng
patent: 5576570 (1996-11-01), Ohsawa et al.
patent: 5682047 (1997-10-01), Consiglio et al.
patent: 5714796 (1998-02-01), Chishiki
patent: 5742085 (1998-04-01), Yu
Nadav Ori
Thomas Tom
Winbond Electronics Corp.
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