Silicon controlled rectifier device for electrostatic...

Details Silicon controlled rectifier device for electrostatic... Silicon controlled rectifier device for electrostatic...

2011-03-22

2011-03-22

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29166

Reexamination Certificate

active

07910998

ABSTRACT:
An SCR device includes a substrate, a plurality of isolation structures defining a first region and a second region in the substrate, an n well disposed in the substrate, an n type first doped region disposed in the first region in the substrate, a p type second doped region disposed in the second region in the substrate, and a p type third doped region (PESD implant region) disposed underneath the first doped region in the first region in the substrate. The well is disposed underneath the first region and the second region, and the third doped region isolates the first doped region from the well.

REFERENCES:
patent: 5780899 (1998-07-01), Hu et al.
patent: 6765771 (2004-07-01), Ker et al.
patent: 2006/0226488 (2006-10-01), Schneider et al.
patent: 2007/0010077 (2007-01-01), Riess et al.
patent: 2007/0023866 (2007-02-01), Chatty et al.
patent: 2008/0179624 (2008-07-01), Russ et al.

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