Silicon-containing resist underlayer coating forming...

Details Silicon-containing resist underlayer coating forming... Silicon-containing resist underlayer coating forming...

2006-12-01

2011-11-01

Hamilton, Cynthia (Department: 1722)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S272100, C430S317000, C430S323000, C430S327000, C430S316000, C430S319000

Reexamination Certificate

active

08048615

ABSTRACT:
There is provided an underlayer coating that is used as an underlayer of photoresists in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to the photoresists depending on the type of etching gas, does not intermix with the photoresists, and is capable of flattening the surface of a semiconductor substrate having holes of a high aspect ratio; and an underlayer coating forming composition for forming the underlayer coating. The underlayer coating forming composition for forming by light irradiation an underlayer coating used as an underlayer of a photoresist in a lithography process of the manufacture of semiconductor devices, includes a polymerizable compound containing 5 to 45% by mass of silicon atom (A), a photopolymerization initiator (B), and a solvent (C).

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