Silicon containing positive resist for DUV lithography

Details Silicon containing positive resist for DUV lithography Silicon containing positive resist for DUV lithography

1992-09-10

1994-08-16

Dean, Ralph H.

Synthetic resins or natural rubbers -- part of the class 520 ser

Synthetic resins

From silicon reactant having at least one...

528 10, 430270, C08G 7700

Patent

active

053388186

ABSTRACT:
A method of synthesizing a silicon-containing positive resist for use as a imaging layer in DUV, x-ray, or e-beam lithography is disclosed. The resist contains arylsilsesquioxane polymers with acid sensitive pendant groups as dissolution inhibitors and a photoacid generator.

REFERENCES:
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patent: 4544729 (1985-10-01), Nate et al.
patent: 4657843 (1987-04-01), Fukuyama et al.
patent: 4734481 (1988-03-01), Steinmann
patent: 4745169 (1988-05-01), Sugiyama et al.
patent: 4931379 (1990-06-01), Brunsvolt et al.
patent: 5120629 (1992-06-01), Bauer et al.
patent: 5158854 (1992-10-01), Imamura et al.
Sugiyama et al., "Positive Excimer Laser Resists Prepared With Aliphatic Diazoketones", Society of Plastics Eng. Conf., pp. 51-60 (Nov. 1988).

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