Silicon-containing polyimides as oxygen etch stop and dual diele

Details Silicon-containing polyimides as oxygen etch stop and dual diele Silicon-containing polyimides as oxygen etch stop and dual diele

1986-01-31

1987-09-08

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29846, 156646, 156652, 156657, 1566591, 156668, 156901, 427 96, 428601, 428620, 4284735, 428901, 430314, 430316, 430317, 174 685, B44C 122, C03C 1500, C03C 2506, B29C 3700

Patent

active

046922059

ABSTRACT:
The use of silicon-containing polyimide as an oxygen etch barrier in a metal lift-off process and as an oxygen etch stop in the fabrication of multi-layer metal structures is described. In practice, a lift-off layer is applied on a substrate, followed by a layer of silicon-containing polyimide and a layer of photoresist. The photoresist is lithographically patterned, and the developed image is transferred into the silicon-containing polyimide layer with a reactive ion etch using a CF.sub.4 /O.sub.2 gas mixture. The pattern is transferred to the lift-off layer in a reactive ion etch process using oxygen. Subsequent blanket metal evaporation followed by removal of the lift-off stencil results in the desired metal pattern on the substrate. In an alternate embodiment, the silicon-containing polyimide can be doped with a photoactive compound reducing the need for a separate photoresist imaging layer on the top.

REFERENCES:
patent: 4430153 (1984-02-01), Gleason et al.
patent: 4493855 (1985-01-01), Sachdev et al.

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