Silicon carbide transistor and method therefor

Details Silicon carbide transistor and method therefor Silicon carbide transistor and method therefor

1998-04-03

2001-01-30

Whitehead, Jr., Carl (Department: 2822)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S458000, C438S459000, C438S469000, C438S931000

Reexamination Certificate

active

06180495

ABSTRACT:

BACKGROUND OF THE INVENTION
The present invention relates, in general, to semiconductor devices, and more particularly, to a novel silicon carbide transistor.
Silicon carbide transistors typically are formed on a silicon carbide substrate. Often, the source and drain areas are a series of alternating stripes that are formed into a top surface of a thick bulk single crystal silicon carbide substrate. A portion of such a prior art structure is shown in
FIG. 1
wherein a transistor
100
is formed on a thick, typically greater than about three hundred microns, bulk single crystal silicon carbide substrate
101
. Transistor
100
has a source
102
that is formed as a long rectangular stripe on the top surface of substrate
101
. A drain
103
is also formed as a rectangular stripe on the top surface of substrate
101
. A metal gate
104
is formed on the top surface between source
102
and drain
103
. A drain electrode
107
is formed on top of drain
103
and is used to interconnect drain
103
to other drain areas on transistor
100
. In order to connect source
102
to other source areas on transistor
100
, a source electrode
106
is typically formed as an air-bridge extending from source
102
up into the air across gate
104
and drain electrode
107
to an adjacent source area. Such air-bridges are well known to those skilled in the art. Some disadvantages of such air-bridge structures are that they are difficult and expensive to fabricate, and such structures are unreliable. Additionally, such air-bridges result in excess source impedance thereby effecting the performance of transistor
100
.
Accordingly, it is desirable to have a silicon carbide transistor that does not utilize air-bridges, that reduces manufacturing cost, and that minimizes source impedance of the transistor.


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Cioccio et al. “Silicon Carbide on Insulator Formation Using the Smart Cut Process”, Electronics Letters, vol. 32, pp. 1144-1145.

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