Silicon carbide transistor and method

Details Silicon carbide transistor and method Silicon carbide transistor and method

1997-06-16

1999-03-23

Dutton, Brian

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438182, 438931, H01L 21338

Patent

active

058858601

ABSTRACT:
A silicon carbide MESFET (10) is formed to have a source (21) and a drain (22) that are self-aligned to a gate (16) of the MESFET (10). The gate (16) is formed to have a T-shaped structure with a gate-to-source spacer (18) and gate-to-drain spacer (19) along each side of a base of the gate (16). The gate (16) is used as a mask for implanting dopants to form the source (21) and drain (22). A laser annealing is performed after the implantation to activate the dopants. Because the laser annealing is a low temperature operation, the gate (16) is not detrimentally affected during the annealing.

REFERENCES:
patent: 5270554 (1993-12-01), Palmour

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