Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1997-06-18
1999-05-11
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257266, 257279, 257495, 257 77, H01L29/80
Patent
active
059030208
ABSTRACT:
A static induction transistor having a silicon carbide substrate upon which is deposited a silicon carbide layer arrangement. The layer arrangement has a plurality of spaced gate regions for controlling current flow from a source region to a drain region vertically spaced from the source region by a drift layer. The pitch distance p between gate regions is 1 to 5 microns and the drift layer thickness d is also 1 to 5 microns.
In one embodiment the source regions are positioned alternatively with the gate regions and are formed in a top layer of high doping concentration. In another embodiment the gate regions are ion implanted in the layer arrangement.
In another embodiment the structure includes a dual oxide layer covering gate and source or drain regions, and in yet another embodiment contacts for the drain, source and gate regions are located on the same side of the substrate member.
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T. Shino, et al., "New SIT Structure Exceeds 10W at 2 GHz," Microwaves, Feb. 1980, pp. 48-53.
Agarwal Anant K.
Brandt Charles D.
Clarke Rowland C.
Siergiej Richard R.
Guay John
Northrop Grumman Corporation
Sutcliff Walter G.
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