Silicon carbide semiconductor device with trench

Details Silicon carbide semiconductor device with trench Silicon carbide semiconductor device with trench

1997-09-26

2000-02-01

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

257 77, 257329, 257330, 257332, 257333, 257334, 257289, H01L 310312

Patent

active

060206004

ABSTRACT:
A silicon carbide semiconductor device having a high blocking voltage, low loss, and a low threshold voltage is provided. An n.sup.+ type silicon carbide semiconductor substrate 1, an n.sup.- type silicon carbide semiconductor substrate 2, and a p type silicon carbide semiconductor layer 3 are successively laminated on top of one another. An n.sup.+ type source region 6 is formed in a predetermined region of the surface in the p type silicon carbide semiconductor layer 3, and a trench 9 is formed so as to extend through the n.sup.+ type source region 6 and the p type silicon carbide semiconductor layer 3 into the n.sup.- type silicon carbide semiconductor layer 2. A thin-film semiconductor layer (n type or p type) 11a is extendedly provided on the surface of the n.sup.+ type source region 6, the p type silicon carbide semiconductor layer 3, and the n.sup.- type silicon carbide semiconductor layer 2 in the side face of the trench 9. A gate electrode layer 13 is disposed through a gate insulating layer 12 within the trench 9. A source electrode layer 15 is provided on the surface of the p type silicon carbide semiconductor layer 3 and on the surface of the n.sup.+ type source region 6, and a drain electrode layer 16 is provided on the surface of the n.sup.+ type silicon carbide semiconductor substrate 1.

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