Semiconductor device manufacturing: process – Silicon carbide semiconductor
Reexamination Certificate
2007-07-12
2009-06-02
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Silicon carbide semiconductor
C438S197000, C438S700000, C257SE21170, C257SE21054, C257SE21421, C257SE21655
Reexamination Certificate
active
07541300
ABSTRACT:
A silicon carbide semiconductor device includes: a semiconductor substrate having a silicon carbide substrate, a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer; a trench penetrating the second and the third semiconductor layers to reach the first semiconductor layer; a channel layer on a sidewall and a bottom of the trench; an oxide film on the channel layer; a gate electrode on the oxide film; a first electrode connecting to the third semiconductor layer; and a second electrode connecting to the silicon carbide substrate. A position of a boundary between the first semiconductor layer and the second semiconductor layer is disposed lower than an utmost lowest position of the oxide film.
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Kumar Malhan Rajesh
Takeuchi Yuichi
DENSO CORPORATION
Nhu David
Posz Law Group , PLC
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