Silicon carbide semiconductor device and method for...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S931000, C257S077000, C257SE21062, C257SE29104

Reexamination Certificate

active

07935628

ABSTRACT:
A low on-resistance silicon carbide semiconductor device is provided to include an ohmic electrode of low contact resistance and high adhesion strength formed on a lower surface of silicon carbide. Specifically, the silicon carbide semiconductor device includes at least an insulating film, formed on an upper surface of a silicon carbide substrate, and includes at least an ohmic electrode, formed of an alloy comprising nickel and titanium, or formed of a silicide comprising nickel and titanium, and which is formed on the lower surface of the silicon carbide substrate.

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Kenji Fukuda, et al., “Effect of Gate Oxidation Method on Electrical Properties of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC C(0001) Face”, Applied Physics Letters, vol. 84, No. 12, Mar. 22, 2004, pp. 2088-2090.
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