Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-05-03
2011-05-03
Sandvik, Benjamin P (Department: 2826)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S931000, C257S077000, C257SE21062, C257SE29104
Reexamination Certificate
active
07935628
ABSTRACT:
A low on-resistance silicon carbide semiconductor device is provided to include an ohmic electrode of low contact resistance and high adhesion strength formed on a lower surface of silicon carbide. Specifically, the silicon carbide semiconductor device includes at least an insulating film, formed on an upper surface of a silicon carbide substrate, and includes at least an ohmic electrode, formed of an alloy comprising nickel and titanium, or formed of a silicide comprising nickel and titanium, and which is formed on the lower surface of the silicon carbide substrate.
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Fukuda Kenji
Harada Shinsuke
Katou Makoto
Yatsuo Tsutomu
Kuo W. Wendy
National Institute for Advanced Industrial Science and Technolog
Sandvik Benjamin P
Wenderoth , Lind & Ponack, L.L.P.
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