Silicon carbide semiconductor device and manufacturing method th

Details Silicon carbide semiconductor device and manufacturing method th Silicon carbide semiconductor device and manufacturing method th

1998-03-04

2000-05-02

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257330, H01L 310312

Patent

active

060575581

ABSTRACT:
In a silicon carbide semiconductor device such as a trench gate type power MOSFET, the film thickness and the impurity concentration of a thin film silicon carbide semiconductor layer formed on a trench side face to constitute an accumulation-type channel-forming region and enable the device to operate with a low gate voltage, low on-resistance and low power loss are set so that on impression of a reverse bias voltage a pn junction between a P-type epitaxial layer and an n.sup.- -type epitaxial layer undergoes avalanche breakdown before the thin film silicon carbide semiconductor layer undergoes punch-through. By this means it is possible to obtain a target high source-drain withstand voltage.

REFERENCES:
patent: 4754310 (1988-06-01), Coe
patent: 5506421 (1996-04-01), Palmour
patent: 5610422 (1997-03-01), Yanagiya et al.
patent: 5614749 (1997-03-01), Ueno
patent: 5689128 (1997-11-01), Hshieh et al.
patent: 5693569 (1997-12-01), Ueno
patent: 5773849 (1998-06-01), Harris et al.
patent: 5973360 (1999-10-01), Tihanyi

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