Silicon carbide semiconductor device

Details Silicon carbide semiconductor device Silicon carbide semiconductor device

1990-06-05

1993-02-02

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257 76, 257200, 257289, H01L 2910, H01L 2978, H01L 2701, H01L 2704

Patent

active

051841991

ABSTRACT:
A silicon carbide semiconductor device is disclosed which includes a semiconductor substrate and a silicon carbide single-crystal layer formed above the substrate, the silicon carbide single-crystal layer having a device active region. The silicon carbide semiconductor device further includes an aluminum nitride single-crystal layer which is disposed between the silicon carbide single-crystal layer and the substrate. The aluminum nitride single-crystal layer functions as an electrically insulating layer by which the silicon carbide signale-crystal layer is isolated electrically from the substrate.

REFERENCES:
patent: 3609471 (1971-09-01), Scace et al.
patent: 3716759 (1973-02-01), Scace et al.
patent: 4470059 (1984-09-01), Nishizawa et al.
patent: 4796077 (1989-01-01), Takeda et al.
patent: 4875083 (1989-10-01), Palmour
patent: 4878106 (1989-10-01), Sachs
J. W. Palmour et al., J. Appl. Phys., vol. 64, No. 4, Aug. 15, 1988, pp. 2168-2177.

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