Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2007-02-28
2009-12-08
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S341000, C257SE29226, C257SE21409, C438S300000
Reexamination Certificate
active
07629616
ABSTRACT:
A self-aligned, silicon carbide power metal oxide semiconductor field effect transistor includes a trench formed in a first layer, with a base region and then a source region epitaxially regrown within the trench. A window is formed through the source region and into the base region within a middle area of the trench. A source contact is formed within the window in contact with a base and source regions. The gate oxide layer is formed on the source and base regions at a peripheral area of the trench and on a surface of the first layer. A gate electrode is formed on the gate oxide layer above the base region at the peripheral area of the trench, and a drain electrode is formed over a second surface of the first layer.
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Bertilsson Kent
Harris Christopher
Konstantinov Andrei
Cree Inc.
Smith Matthew
Swanson Walter H
Volentine & Whitt P.L.L.C.
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