Silicon carbide power MOSFET with floating field ring and floati

Details Silicon carbide power MOSFET with floating field ring and floati Silicon carbide power MOSFET with floating field ring and floati

1992-06-08

1993-08-03

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

Field relief electrode

257 77, 257339, 257495, 257496, H01L 2358, H01L 310312, H01L 2976, H01L 2358

Patent

active

052332152

ABSTRACT:
A silicon carbide power MOSFET device includes a first silicon carbide layer, epitaxially formed on the silicon carbide substrate of opposite conductivity type. A second silicon carbide layer of the same conductivity type as the substrate is formed on the first silicon carbide layer. A power field effect transistor is formed in the device region of the substrate and in the first and second silicon carbide layers thereover. At least one termination trench is formed in the termination region of the silicon carbide substrate, extending through the first and second silicon carbide layers thereover. The termination trench defines one or more isolated mesas in the termination region which act as floating field rings. The termination trenches are preferably insulator lined and filled with conductive material to form floating field plates. The outermost trench may be a deep trench which extends through the first and second silicon carbide layers and through the drift region of the silicon carbide substrate. Since the termination region is formed from the first and second silicon carbide layers in the termination region, a time consuming, high temperature diffusion to form a floating field ring is not necessary. Rather, the same epitaxial first and second silicon carbide layers which are used to form an FET in the device region may also be used to form the floating field ring in the termination region.

REFERENCES:
patent: 4414560 (1983-11-01), Lidow
patent: 4567502 (1986-01-01), Nakagawa et al.
patent: 4999684 (1991-03-01), Temple
patent: 5003372 (1991-03-01), Kim et al.
patent: 5072266 (1991-12-01), Bulucea et al.
Modern Power Devices, B. J. Baliga, pp. 79-119 and pp. 263-343.
An Ultra-Low On-Resistance Power MOSFET Fabricated by Using a Fully Self-Aligned Process, D. Ueda, H. Takagi and G. Kano, IEEE Transactions on Electron Devices, vol. ED-34, No. 4, Apr. 1987, pp. 926-930.
Numerical and Experimental Comparison of 60 V Vertical Double-Diffused MOSFETs and MOSFETs with a Trench-Gate Structure, H. R. Chang, Solid-State Electronics vo. 32, No. 3, 1989, pp. 247-251.
Trench DMOS Transistor technology for High-Current (100 A Range) Switching, C. Bulucea and R. Rossen, Solid-State Electronics, vol. 34, No. 5, 1991, pp. 493-507.

Affiliated with

Also associated with

Rating

Silicon carbide power MOSFET with floating field ring and floati does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon carbide power MOSFET with floating field ring and floati, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon carbide power MOSFET with floating field ring and floati will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2273019