Silicon carbide MOS type field-effect transistor with at least o

Details Silicon carbide MOS type field-effect transistor with at least o Silicon carbide MOS type field-effect transistor with at least o

1991-09-16

1993-06-01

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 77, 257383, 257384, 257472, 257613, 257769, H01L 2976, H01L 310312, H01L 27095, H01L 2348

Patent

active

052162648

ABSTRACT:
A silicon carbide field-effect transistor is disclosed which includes an MOS structure composed successively of a silicon carbide layer, a gate insulator film, and a gate electrode. The field-effect transistor has source and drain regions formed in the silicon carbide layer, between which the MOS structure is disposed, wherein at least one of the source and drain regions is formed by the use of a Schottky contact on the silicon carbide layer.

REFERENCES:
patent: 4503598 (1985-03-01), Vora et al.
patent: 4757028 (1988-07-01), Kondoh et al.
patent: 4762806 (1988-08-01), Suzuki et al.
patent: 4897710 (1990-01-01), Suzuki et al.
patent: 4912063 (1990-03-01), Davis et al.
patent: 4914050 (1990-04-01), Shibata
patent: 4990994 (1991-02-01), Furukawa et al.
J. Electrochem. Soc., 135 (1988) 359-362, "Electrical Contacts to Beta Silicon Carbide Thin Films" by Edmond et al.
J. Appl. Phys. 64(4), Aug. 15, 1988, "Characterization of Device Parameters in High Temperature Metal-Oxide-Semiconductor Field-Effect Transistors in B-SiC thin Films" by Palmour et al., pp 2168-2177.

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