Silicon carbide high breakdown voltage semiconductor device

Details Silicon carbide high breakdown voltage semiconductor device Silicon carbide high breakdown voltage semiconductor device

2005-11-15

2009-08-04

Doan, Theresa T (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S077000, C257S340000, C257SE29104, C438S284000

Reexamination Certificate

active

07569900

ABSTRACT:
A semiconductor device includes an SiC substrate, an SiC layer of a first conductivity type disposed on the upper surface of the SiC substrate, a first SiC region of a second conductivity type disposed on the SiC layer, a second SiC region of the first conductivity type disposed on a surface region of the first SiC region, including a nitrogen-added first sub-region and a phosphorus-added second sub-region disposed in contact with the first sub-region, a gate insulating film disposed to extend over the SiC layer, first SiC region, and first sub-region of the second SiC region, a gate electrode formed on the gate insulating film, a first electrode formed on the second sub-region of the second SiC region and the first SiC region, and a second electrode formed on the lower surface of the SiC substrate.

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