Silicon carbide having low dielectric constant

Details Silicon carbide having low dielectric constant Silicon carbide having low dielectric constant

2005-02-15

2005-02-15

Wille, Douglas (Department: 2814)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S783000

Reexamination Certificate

active

06855645

ABSTRACT:
A low-k precursor reactant compound containing silicon and carbon atoms is flowed into a CVD reaction chamber. High-frequency radio-frequency power is applied to form a plasma. Preferably, the reaction chamber is part of a dual-frequency PECVD apparatus, and low-frequency radio-frequency power is applied to the reaction chamber. Reactive components formed in the plasma react to form low-dielectric-constant silicon carbide (SiC) on a substrate surface. A low-k precursor is characterized by one of: a silicon atom and a carbon—carbon triple bond; a silicon atom and a carbon—carbon double bond; a silicon—silicon bond; or a silicon atom and a tertiary carbon group.

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