Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2005-08-30
2005-08-30
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S076000, C257S351000, C257S412000, C257S413000, C438S931000
Reexamination Certificate
active
06936849
ABSTRACT:
A field-effect transistor (FET) device and method of fabrication uses an electrically interconnected polycrystalline or microcrystalline silicon carbide (SiC) gate having a lower electron affinity and higher work function than a polysilicon gate FET. The smaller threshold voltage magnitude of the SiC gate FET allows reduced power supply voltages (lowering power consumption and facilitating downward scaling of transistor dimensions), and enables higher switching speeds and improved performance. The smaller threshold voltage magnitudes are obtained without ion-implantation, which is particularly useful for SOI and thin film transistor devices. Threshold voltage magnitudes are stable in spite of subsequent thermal processing steps. N-channel threshold voltages are optimized for enhancement mode.
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Ahn Kie Y.
Forbes Leonard
Kang Donghee
Schwegman Lundberg Woessner & Kluth P.A.
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