Silicon carbide gas distribution plate and RF electrode for...

Details Silicon carbide gas distribution plate and RF electrode for... Silicon carbide gas distribution plate and RF electrode for...

2011-08-09

2011-08-09

Zervigon, Rudy (Department: 1716)

Coating apparatus

Gas or vapor deposition

With treating means

C156S345330, C156S345340, C156S345430, C156S345450

Reexamination Certificate

active

07992518

ABSTRACT:
A showerhead for use in a capacitively-coupled plasma chamber and made of low resistivity bulk layer coated with CVD SiC. The bulk low resitivity material may be, for example, graphite, Silicon Carbide (SiC), converted graphite, SiC+C, etc. Sintered SiC may be used as the bulk material coated with CVD SiC to provide a showerhead that is suitable for use in a capacitively-coupled plasma chamber.

REFERENCES:
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patent: 09181048 (1997-07-01), None
Gupta, A et al. CVD Growth and Characterization of 3C-SiC Thin Films, Bull. Mater. Sci., vol. 27, No. 5, Oct. 2004, pp. 445-451. Indian Academy of Sciences.

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