Silicon carbide-based device contact and contact fabrication...

Details Silicon carbide-based device contact and contact fabrication... Silicon carbide-based device contact and contact fabrication...

2007-07-24

2007-07-24

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S621000, C438S570000, C438S931000, C257SE21054, C257SE21163, C257SE21173, C257SE21359, C257SE29104

Reexamination Certificate

active

11053800

ABSTRACT:
A silicon carbide-based device contact and contact fabrication method employ a layer of poly-silicon on a SiC substrate, with the contact's metal layer deposited on top of the poly-silicon. Both Schottky and ohmic contacts can be formed. The poly-silicon layer can be continuous or patterned, and can be undoped or doped to be n-type or p-type. The present contact and method provide excellent contact adhesion, and can be employed with a number of different device types, to provide electrical contacts for Schottky diodes, pn diodes, and transistors, for example.

REFERENCES:
patent: 5270554 (1993-12-01), Palmour
patent: 5679966 (1997-10-01), Baliga
patent: 6979863 (2005-12-01), Ryu
patent: 6998322 (2006-02-01), Das

Affiliated with

Also associated with

Rating

Silicon carbide-based device contact and contact fabrication... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon carbide-based device contact and contact fabrication..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon carbide-based device contact and contact fabrication... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3789314