Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2007-01-23
2007-01-23
Schillinger, Laura M. (Department: 2813)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S479000, C438S483000
Reexamination Certificate
active
10890155
ABSTRACT:
In a method of manufacturing a silicon carbide substance, such as a film, a layer, a semiconductor, which is doped with an impurity, a carbonization process is executed after formation of a doped silicon substance which is obtained by carrying out a silicon deposition process and by a doping process of the impurity. Both the silicon deposition and the doping processes may be simultaneously or separately carried out prior to the carbonization process or may be continued during the carbonization process also. At any rate, the carbonization process is intermittently carried out. A unit process of composed of a combination of the silicon deposition process, the doping process, and the carbonization process may be repeated a plurality times, for example, 2000 times.
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